Cart (Loading....) | Create Account
Close category search window
 

A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bo-Wen Lin ; Mater. Sci. & Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Nian-Jheng Wu ; Wu, Y.C.S. ; Hsu, S.C.

Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 μm to 40 μm. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 μm Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.

Published in:

Display Technology, Journal of  (Volume:9 ,  Issue: 5 )

Date of Publication:

May 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.