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High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

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6 Author(s)
Plis, E. ; Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA ; Klein, B. ; Myers, S. ; Gautam, N.
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We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., λ100%, was 5.6 μm at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 μm, a dark current density Jd of 0.53 A/cm2 (at -50 mV) and specific detectivity D* = 8.5 × 109 Jones (at 0 V) were demonstrated, which are superior values to the state-of-the-art MWIR T2SL detectors with the same (p-i-n) design grown on conventional GaSb (100) substrates.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )

Date of Publication:

March 2013

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