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High-Quality ICPCVD \hbox {SiO}_{2} for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

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6 Author(s)
Bong-Ryeol Park ; Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea ; Jae-Gil Lee ; Woojin Choi ; Hyungtak Kim
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We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ~12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )