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Total Ionizing Dose Radiation Effects in Al2O _{3} -Gated Ultra-Thin Body In _{0.7} Ga _{0.3} As MOSFETs

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8 Author(s)
X. Sun ; Electrical Engineering Department and Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven ; F. Xue ; J. Chen ; E. X. Zhang
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We have investigated total ionizing dose (TID) radiation effects in Al2O3-gated ultra-thin body In0.7Ga0.3 As MOSFETs. A non-monotonic dependence of the threshold voltage (Vth) on the X-ray radiation dose was observed and analyzed; the accompanying degradation in subthreshold swing (SS) likely is caused by non-uniform trapped charge in the near-interfacial Al2O3 rather than interface-trap generation. The off-current and gate breakdown voltage were independent of dose up to 6 Mrad(SiO2). Compared to the InP-free device, the device with an InP barrier is more vulnerable to TID effects in terms of Vth shift, SS, and mobility degradation.

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IEEE Transactions on Nuclear Science  (Volume:60 ,  Issue: 1 )