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Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

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9 Author(s)
Lam, Jeffrey C. K. ; GLOBALFOUNDRIES Singapore Pte Ltd, Woodlands Industrial Park D, Street 2, Singapore 738406 ; Huang, Maggie Y. M. ; Hau Ng, Tsu ; Khalid Bin Dawood, Mohammed
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Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development due to its weaker intrinsic breakdown strength compared to SiO2 dielectrics. With continuous technology scaling, this problem is further exacerbated for Cu/ultra-low-k interconnects. In this letter, the TDDB degradation behavior of ultra-low-k dielectric in Cu/ultra-low-k interconnects will be investigated by a method consisting of a combination of Raman with Fourier transform infrared vibrational microscopes. In TDDB tests on Cu/low-k interconnect, it was found that intrinsic degradation of the ultra-low-k dielectric would first occur under electrical field stress. Upon further electrical field stress, the ultra-low-k dielectric degradation would be accelerated due to Ta ions migration from the Ta/TaN barrier bi-layer into the ultra-low-k dielectrics. In addition, no out-diffusion of Cu ions was observed in our investigation on Cu/Ta/TaN/SiCOH structures.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 2 )

Date of Publication:

Jan 2013

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