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High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

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3 Author(s)
Yang, K. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Munns, G.O. ; Haddad, G.I.

We report the performance of InP Double Heterojunction Bipolar Transistors (DHBT's) with a chirped InGaAs/InP superlattice B-C junction grown by CBE. The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A highly doped thin layer was also included at the end of the CSL to offset the quasi-electric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction. The InP/InGaAs CSL DHBT demonstrated a high BV/sub CEO/ of 18.3 V with a typical current gain of 55 with minimal carrier blocking up to high current densities. Maximum cutoff frequencies of fmax=146 GHz and f/sub r/=71 GHz were obtained from the fabricated 2×10 μm2-emitter DHBT.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 11 )