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Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMTs

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5 Author(s)
Arai, Kunihiro ; NTT Syst. Electron. Labs., Kanagawa, Japan ; Matsuzaki, Hideaki ; Maezawa, K. ; Otsuji, T.
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A static frequency divider constructed with resonant tunneling diodes (RTDs) in combination with HEMTs is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong nonlinear I-V characteristics of RTD's are fully utilized for this reduction.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 11 )