By Topic

Thermal mapping of interconnects subjected to brief electrical stresses

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ju, Y.S. ; Dept. of Mech. Eng., Stanford Univ., CA, USA ; Goodson, K.E.

The failure of metal interconnects subjected to brief electrical-current pulses is a reliability concern for the integrated circuits industry, especially in connection with electrostatic discharge (ESD). Since the magnitude and spatial distribution of the temperature rise during pulsing events strongly influence these failures, the development of suitable thermometry techniques is needed to understand the failure. This work reports scanning laser-reflectance thermometry with a novel calibration procedure, which captures transient temperature distributions along interconnects subjected to sub-microsecond current pulses. The temperature distribution is strongly affected by corners and contact pads and by the pulse duration.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 11 )