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A high performance 16 Mb DRAM using giga-bit technologies

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8 Author(s)
Jeong, Gi-Tae ; Technol. Dev., Samsung Electron. Co., Kyungki-Do, South Korea ; Kyu-Chan Lee ; Ha, Dae-Won ; Kyu-Hyun Lee
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An experimental high performance 16 Mb Dynamic Random Access Memory (DRAM) having a 0.18 μm design rule for gigabit DRAM's was developed. Junction leakage current and junction capacitance were reduced by shallow trench isolation (STI). A fast access time even at low operation voltage (1.5 V) was achieved by using a TiSi2 gate and new circuit techniques. Large sensing margin and stable operation were achieved by using a new dielectric material (Ta2 O5) in the cell capacitor. Insufficient depth of focus margin for the back-end of line process was overcome by a triple metallization scheme with one W and two Al metals. With these new technologies, a high speed of 28 ns row address access time (Trac ) at 1.5 V and a small chip size of 5.3×5.4 mm2 were achieved

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 11 )