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A hot-carrier degradation mechanism and electrical characteristics in S4D n-MOSFET's

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9 Author(s)
Yoshitomi, T. ; Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan ; Saito, M. ; Ohguro, T. ; Ono, M.
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A silicided silicon-sidewall source and drain (S4D) nMOSFET is demonstrated and its hot carrier reliability is investigated for the first time. This S4D nMOSFET exhibited high drain current and well-suppressed short channel effects concurrently. In spite of the impact ionization rate issue, the S4D structure offers a major improvement in current and transconductance degradations as compared with the LDD structure. The mechanism of the improved hot carrier reliability is explained using a two-dimensional (2-D) simulation

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 11 )

Date of Publication:

Nov 1997

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