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Effects of the inversion layer centroid on MOSFET behavior

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5 Author(s)
Lopez-Villanueva, J.A. ; Dept. de Electronica, Facultad de Ciencias, Granada, Spain ; Cartujo-Casinello, P. ; Banqueri, J. ; Gamiz, F.
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The effects of the average inversion-layer penetration, the inversion-layer centroid, on the inversion-charge density and the gate-to-channel capacitance have been analyzed. The quantum model has been used, and a variety of data have been obtained by self-consistently solving the Poisson and Schrodinger equations. An empirical expression for the centroid position that is valid for a wide range of electrical and technological variables has been obtained and has been applied to accurately model the inversion-layer density and capacitance

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 11 )