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An analytical drain current model for submicrometer and deep submicrometer MOSFET's

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2 Author(s)
Sheng-Lyang Jang ; Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan ; Man-Chun Hu

In this paper, we present a new, analytical, and physics-based drain current model for both submicrometer and deep submicrometer MOSFET's. The model was developed by starting from a two-dimensional (2D) Poisson equation and using the energy balance equation. Using the present model, we can clearly see that the drain current increases with decreasing channel length due to a larger average channel mobility at shorter channel length. The formulas for the saturation drain voltage and the drain current can be reduced to their corresponding well-known formulas in the submicrometer range. The accuracy of the presented model has been verified with the experimental data of metal-oxide-semiconductor (MOS) devices with various geometries

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 11 )