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All-GaAs/AlGaAs readout circuit for quantum-well infrared detector focal plane array

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8 Author(s)
Umansky, Vladimir ; Dept. of Condensed Matter, Weizmann Inst. of Sci., Rehovot, Israel ; Bunin, G. ; Gartsman, K. ; Sharman, C.
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We report the fabrication and testing of an all-GaAs/AlGaAs hybrid readout circuit operating at 77 K designated for use with an GaAs/AlGaAs background-limited quantum-well infrared photodetector focal plane array (QWIP FPA). The circuit is based on a direct injection scheme, using specially designed cryogenic GaAs/AlGaAs MODFET's and a novel n+ -GaAs/AlGaAs/n+-GaAs semiconductor capacitor, which is able to store more than 15 000 electrons/μm2 in a voltage range of ±0.7 V. The semiconductor capacitor shows little voltage dependence, small frequency dispersion, and no hysteresis. We have eliminated the problem of low-temperature degradation of the MODFET I-V characteristics and achieved very low gate leakage current of about 100 fA in the subthreshold regime. The MODFET electrical properties including input-referred noise voltage and subthreshold transconductance were thoroughly tested. Input-referred noise voltage as low as 0.5 μV/√Hz at 10 Hz was measured for a 2×30 μm2 gate MODFET. We discuss further possibilities for monolithic integration of the developed devices

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 11 )

Date of Publication:

Nov 1997

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