Skip to Main Content
A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.