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Analytical Model and Fringing-Field Parasitics of Carrier-Depletion Silicon-on-Insulator Optical Modulation Diodes

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3 Author(s)
Jayatilleka, H. ; Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada ; Sacher, W.D. ; Poon, J.K.S.

We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interdigitated junctions. The model is used to identify the waveguide slab to rib height ratio as a key geometric scaling parameter for the modulation efficiency and bandwidth for lateral diodes. The fringe capacitance is a parasitic effect that leads to a decrease of about 20% in the modulation bandwidth of typical SOI diodes without a corresponding increase in the modulation efficiency. From the scaling relations, the most effective way to increase the modulation bandwidth is to reduce the series resistance of the diode.

Published in:

Photonics Journal, IEEE  (Volume:5 ,  Issue: 1 )