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Cross sections of operating Cu(In,Ga)Se2 thin-film solar cells under defined white light illumination analyzed by Kelvin probe force microscopy

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5 Author(s)
Zhang, Zhenhao ; Light Technology Institute, Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131 Karlsruhe, Germany ; Hetterich, Michael ; Lemmer, Uli ; Powalla, Michael
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The contact potential of cross sections of operating Cu(In,Ga)Se2 thin-film solar cells is analyzed by Kelvin probe force microscopy under defined illumination intensities with white light. The potential drop through the solar cell heterojunction is found to decrease with increasing illumination intensity up to flat-band conditions and the decrease of the potential drop correlates with the increase of the photovoltage induced by the illumination. Interestingly, we observe that potential variations at Cu(In,Ga)Se2 grain boundaries decrease to less than 50 mV under illumination. With this finding, the often claimed beneficial effect of Cu(In,Ga)Se2 grain boundaries is critically discussed.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 2 )

Date of Publication:

Jan 2013

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