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Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor

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13 Author(s)
Ryu, S.G. ; Dept. of Phys., Kyoto Univ., Kyoto, Japan ; Tsuru, T.G. ; Prigozhin, G. ; Kissel, S.
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We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontside illumination. The Al Kα line at 1.5 keV is successfully detected and energy resolution of 188 eV (FWHM) is achieved from a single pixel at this energy. The responsivity is improved to 6 μV/electron and the readout noise is 18 electrons rms. Data from 3 ×3 pixels irradiated with 6.4 keV (Fe Kα) X-rays demonstrates that the circuitry crosstalk between adjacent pixels is less than 0.5%.

Published in:
Nuclear Science, IEEE Transactions on  (Volume:60 ,  Issue: 1 )

Date of Publication: Feb. 2013

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