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Ultraviolet Detector Based on \hbox {SrZr}_{0.1} \hbox {Ti}_{0.9}\hbox {O}_{3} Film

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6 Author(s)
Min Zhang ; State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, China ; Yu Chen ; Haifeng Zhang ; Weiyou Chen
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In this letter, a nanocrystalline SrZr0.1Ti0.9 O3thin film was synthesized by sol-gel method and characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and UV-visible absorption spectra. Interdigitated Au electrodes were deposited on the film to fabricate metal-semiconductor-metal ultraviolet photodetector. At 5-V bias, the dark current of the device was 41 pA. Under the irradiation of 260-nm UV light, peak responsivity of 94 mA/W was achieved, which was higher than that of pure SrTiO3-based photodetectors. The higher responsivity of the SrZr0.1Ti0.9O3 device may be due to the introduction of zirconia, which would induce more oxygen vacancies. The UV/visible rejection ratio R260 nm/R380 nm was more than three orders of magnitude, indicating excellent sensitivity. The rise time and fall time of the device were 3.8 and 565 ms, respectively.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 3 )