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Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET

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3 Author(s)
Damrongplasit, N. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA ; Sung Hwan Kim ; Tsu-Jae King Liu

The impact of random dopant fluctuations (RDF) on the performance of an optimized TFET design comprising a raised germanium (Ge) source region is investigated via 3-D TCAD simulation. The RDF within the source region results in degraded subthreshold swing and lower turn-on voltage for the raised-Ge-source TFET design. In addition, drain-induced barrier tunneling is mitigated with the raised source design. An optimized raised-Ge-source TFET is projected to provide for lower energy operation at frequencies up to 500 MHz when compared with an ideal MOSFET.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )

Date of Publication:

Feb. 2013

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