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A photonic crystal nanobeam cavity with stagger holes in InP/InGaAsP/InP heterostructure is proposed for ultrafast directly modulated nano-light-emitting diodes (nanoLEDs). With stagger holes, the quality factor Q can be engineered in the range of 102 ~ 104 while keeping a small mode volume (Veff). As a result, the modulation speed of nanoLEDs can be dramatically improved by a small Veff to enhanced spontaneous emission (SpE) rate and a moderate Q to counterbalance SpE lifetime and photon lifetime of the cavity. In our simulation, the direct modulation bandwidth could be higher than 60 GHz with optimal Q value of 2150 and Veff of 2.3( λ0/2n)3.