Skip to Main Content
We investigated the doping properties of polycrystalline silicon (poly-Si) deposited by atmospheric pressure plasma enhanced chemical transport and fabricated a strain gauge with the doped poly-Si film. The doping was done by the chemical transport of the dopant in Si sources. The electronic properties reveal that most of the dopants were transported as Si atoms. A strain gauge was fabricated with the doped poly-Si film. All processes were carried out below 350°C. The strain gauge showed the good linearity of the resistance change rate with the stress. These results indicate that our Si deposition method has adequate potential for low temperature MEMS processes.