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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

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10 Author(s)
Jung-Kyu Lee ; Interuniv. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea ; Sunghun Jung ; Byeong-In Choe ; Jinwon Park
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Characteristics of flicker (or 1/f) noise have been investigated in resistive-switching random access memory (RRAM) devices with TiN/Ti/TiOx/HfOx/TiN double-layered (DL) metal oxide structure. In DL-RRAMs, no significant difference is found in the normalized current noise power spectral densities of the high- and low-resistance states, unlike RRAMs with the TiN/Ti/TiOx/ TiN SL structure. Based on comparative analysis, we demonstrate that the dominant 1/f noise source of DL-RRAM is located near the TiOx/HfOx and HfOx/TiN interfaces, and the origin of 1/f noise is modeled to be the mobility fluctuation. A unique measurement method, which completely breaks down the HfOx layer only, was employed for a systematic analysis of RRAMs with three different structures.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )