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Characteristics of flicker (or 1/f) noise have been investigated in resistive-switching random access memory (RRAM) devices with TiN/Ti/TiOx/HfOx/TiN double-layered (DL) metal oxide structure. In DL-RRAMs, no significant difference is found in the normalized current noise power spectral densities of the high- and low-resistance states, unlike RRAMs with the TiN/Ti/TiOx/ TiN SL structure. Based on comparative analysis, we demonstrate that the dominant 1/f noise source of DL-RRAM is located near the TiOx/HfOx and HfOx/TiN interfaces, and the origin of 1/f noise is modeled to be the mobility fluctuation. A unique measurement method, which completely breaks down the HfOx layer only, was employed for a systematic analysis of RRAMs with three different structures.