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A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

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4 Author(s)
Yujeong Seo ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; Min Yeong Song ; Ho-Myoung An ; Tae Geun Kim

ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )