Referenced Items are not available for this document.
In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-mm2 embedded inductor with an inductance of 43.6 nH and a peak Q-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.
Published in:
Electron Device Letters, IEEE
(Volume:34
,
Issue:
2
)
Date of Publication: Feb. 2013
- Page(s):
- 292 - 294
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13250729
- Digital Object Identifier :
- 10.1109/LED.2012.2234077
- Product Type:
- Journals & Magazines
- Date of Publication :
- 14 January 2013
- Date of Current Version :
- 23 January 2013
- Issue Date :
- Feb. 2013
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
