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A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core

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4 Author(s)
Xiangming Fang ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Rongxiang Wu ; Lulu Peng ; Sin, J.K.O.

In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-mm2 embedded inductor with an inductance of 43.6 nH and a peak Q-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )