A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core

In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-
$\hbox{mm}^{2}$
embedded inductor with an inductance of 43.6 nH and a peak
$Q$
-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.