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Effect of static carrier screening on the energy relaxation of electrons in polar-semiconductor multiple-quantum-well superlattices

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4 Author(s)
Feng, Y. ; ARC Photovoltaics Centre of Excellence, The University of New South Wales, Sydney 2052, Australia ; Lin, S. ; Green, M. ; Conibeer, G.

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An electro-static model has been formalized to analyze the effect of carrier screening on the energy relaxation of electrons in polar-semiconductor multiple-quantum-well superlattices. The screened polar potential in this structure has been obtained in terms of its 0th order and 1st order Fourier components. The 1st order correction gives a further reduction of the coupling strength due to the uneven spatial distribution of carriers, and it heavily depends on the relative bi-layer thickness compared to the Debye screening length. The reductions of electron energy relaxation in In0.25GaAs/GaAsP0.33 multiple-quantum-well superlattices have been numerically analyzed yielding conclusions which agree with the recent experiments. The model provides a quantified approach to optimize the structure configuration in terms of the carrier cooling rate, allowing the multiple-quantum-well superlattice to be an ideal absorber candidate for realizing the hot carrier solar cell.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 2 )

Date of Publication:

Jan 2013

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