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In Situ I - V Measurements of an Ultraviolet Enhanced \hbox {ZnS:TiO}_{2}/\hbox {n-Si} Quantum Dot Heterojunction Photodiode Under 120 MeV \hbox {Au}^{9+} Ions

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3 Author(s)
Sana, P. ; Dept. of Phys., Maulana Azad Nat. Inst. of Technol., Bhopal, India ; Verma, S. ; Malik, M.M.

This paper reports the development of a ZnS:TiO2/ n-Si heterojunction photodiode structure by deposition of colloidal ZnS:TiO2 quantum dots (QDs) on the n-Si substrate. To study the diode performance under harsh radiation atmospheres, in situ dark I- V characteristics of the ZnS:TiO2/n-Si photodiode have been studied under the irradiation of 120 MeV Au9+ ions with an incremental increase in fluences from 3 ×1011 to 1 ×1013 ions/cm2. It shows the increase in rectification behavior with the increase in irradiation fluences caused by interface smoothening and interface defect annealing at higher fluences. X-ray diffraction patterns and TEM analysis also show the increased crystallinity of ZnS:TiO2 QDs of size approximately 2-5 nm, whereas photoluminescence spectra show the reduction of defects. These results are in support of the irradiation-induced effects in in situ I- V measurements. The studies are also made for ultraviolet light of 376 nm wavelength (laser power 50 mW) and visible light of power 60 W for pristine and irradiated (at fluence 1 ×1013 ions/cm2) ZnS:TiO2/n-Si heterojunction photodiodes.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 3 )

Date of Publication:

Sept. 2013

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