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Incoherent twin boundary migration induced by ion irradiation in Cu

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6 Author(s)
Li, N. ; Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA ; Wang, J. ; Wang, Y. Q. ; Serruys, Y.
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Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that Σ3{112} incoherent twin boundary (ITB) in Cu films migrates under Cu3+ ion irradiation. Using atomistic modeling, we found that Σ3{112} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within Σ3{112} ITB, we infer that Σ3{112} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 2 )