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Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

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5 Author(s)
Zhang, Jian ; Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China ; Yang, Hui ; Zhang, Qi-long ; Dong, Shurong
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ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 103, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 1 )

Date of Publication:

Jan 2013

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