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An Accurate and Robust Compact Model for High-Voltage MOS IC Simulation

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5 Author(s)
Wenyuan Wang ; Synopsys, Inc., Mountain View, CA, USA ; Tudor, B. ; Xuemei Xi ; WeiDong Liu
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This paper presents an accurate and robust compact model for high-voltage MOS (HV-MOS) transistors for high-voltage IC simulation. This model describes the extended-drain MOS and lateral double-diffused HV-MOS effects such as quasi-saturation, gm reduction, self-heating, impact ionization, output conductance, and charge/capacitance effects accurately. In addition, the quasi-saturation effects are, for the first time, illustrated with a simple mathematic formulation. This model is developed with BSIM4 as the base and validated extensively with technology computer-aided design and measurement for wide ranges of power supplies and operating temperatures.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 2 )

Date of Publication:

Feb. 2013

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