By Topic

Impact of FinFET Technology Introduction in the 3T1D-DRAM Memory Cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Amat, E. ; Dept. of Electron., Univ. Politec. de Catalunya (UPC), Barcelona, Spain ; Almudever, C.G. ; Aymerich, N. ; Canal, R.
more authors

In this paper, the 3T1D-DRAM cell based on FinFET devices is studied as an alternative to the bulk one. We observe an improvement in its behavior when IG and SG FinFETs are properly mixed, since together they provide a relevant increase in the memory circuit retention time. Moreover, our FinFET cell shows larger variability robustness, better performance at low supply voltage, and higher tolerance to elevated temperatures.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 1 )