Referenced Items are not available for this document.
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 μF/cm2) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 ×106, and 9.3 cm2/V·s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.
Published in:
Electron Device Letters, IEEE
(Volume:34
,
Issue:
2
)
Date of Publication: Feb. 2013
- Page(s):
- 259 - 261
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13250719
- Digital Object Identifier :
- 10.1109/LED.2012.2231661
- Product Type:
- Journals & Magazines
- Date of Publication :
- 09 January 2013
- Date of Current Version :
- 23 January 2013
- Issue Date :
- Feb. 2013
- Sponsored by :
- IEEE Electron Devices Society
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