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Enhanced Inversion Mobility on 4H-SiC (\hbox {11}\overline {\hbox {2}} \hbox {0}) Using Phosphorus and Nitrogen Interface Passivation

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8 Author(s)
Gang Liu ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; Ahyi, A.C. ; Yi Xu ; Isaacs-Smith, T.
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Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (11[2̅]0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ~125 cm2/V · s. We also revisit the conventional NO passivation, for which a mobility of ~85 cm2/V · s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )