Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the sneaking current issue in a crossbar structure. In this letter, we have successfully demonstrated a prototype device with inherent rectifying property with a-Si/WO
₃
bilayer structure. After a forming process, the devices exhibit obvious rectifying property with forward/reverse current ratio of 10
²
at ±0.75 V and excellent reproducibility. The formation of localized conductive filaments (CFs) in the WO
₃
layer and the corresponding CF/a-Si Schottky contact are suggested to explain the rectifying behavior. The results in this letter demonstrate a possible way to realize selector-free crossbar structure.