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Self-Rectifying Resistive-Switching Device With  \hbox {a-Si/WO}_{3} Bilayer

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6 Author(s)
Hangbing Lv ; Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China ; Yingtao Li ; Qi Liu ; Shibing Long
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Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the sneaking current issue in a crossbar structure. In this letter, we have successfully demonstrated a prototype device with inherent rectifying property with a-Si/WO3 bilayer structure. After a forming process, the devices exhibit obvious rectifying property with forward/reverse current ratio of 102 at ±0.75 V and excellent reproducibility. The formation of localized conductive filaments (CFs) in the WO3 layer and the corresponding CF/a-Si Schottky contact are suggested to explain the rectifying behavior. The results in this letter demonstrate a possible way to realize selector-free crossbar structure.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )