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Record Low-Power Organic RRAM With Sub-20-nA Reset Current

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6 Author(s)
Wenliang Bai ; Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China ; Ru Huang ; Yimao Cai ; Yu Tang
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In this letter, organic resistive random access memory (RRAM) devices based on double-layer polychloro-para-xylylene (parylene-C) are fabricated, which show stable bipolar resistive switching behavior, excellent data retention, and high scalability. Moreover, extremely low reset current of sub-20 nA and set current of 0.15 μA are obtained with adequate switching margin for the first time in the field of organic RRAM, almost 105 times lower than that of the single-layer parylene-C cells, exhibiting great potentials for future low-power applications. Possible mechanism for the ultralow operating current of double-layer device is discussed.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )

Date of Publication:

Feb. 2013

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