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The luminescence characteristics of CsI(Na) crystal under α and X/γ excitation

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8 Author(s)
Liu, Jinliang ; Department of Engineering Physics, Tsinghua University, Beijing 100084, China ; Liu, Fang ; Ouyang, Xiaoping ; Liu, Bin
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In this paper, we study the effective decay time characteristic of CsI(Na) crystal under 239Pu alpha particle and 137Cs gamma-ray excitation using a single photon counting decay time measurement system. The measurement system employs a silicon optical fiber to couple and transit single photon. The slow decay time component of CsI(Na) crystal is 460–550 ns. We observe a 15 ns fast decay component under alpha particle excitation. In addition, we find that the primary stage of the falling edge in the decay time curve is non-exponential and drops rapidly when CsI(Na) crystal is excited by 239Pu alpha particles. Since the high density of self-trapped-excitons (STEs) is produced in alpha particle excitation process, we propose that the fast falling edge is corresponding to the quenching process of STEs which transit with non-radiation in the case of high excitation density. To prove this proposal, we excited the CsI(Na) crystal with sub-nanosecond intensive pulsed X-ray radiation. Our X-ray impinging results show that the fast falling edge also exists under low energy (average 100 keV) bremsstrahlung X-ray excitation.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 2 )

Date of Publication:

Jan 2013

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