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A new memristor based on zinc oxide (ZnO) nanowires grown on the copper layer of a printed circuit board has been fabricated showing similar characteristics as memristive metal/oxide/metal structures. This device is then used with a capacitor and an inductor to form a first-order and a second-order lowpass filter to demonstrate the adaptability of the memristor. The memristor reacts to different input voltage bias and changes its resistance accordingly. The gain, damping and Q-factor of the lowpass filters are observed to be varying with small input voltages.