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Decreasing read cell current (ICELL) has become a major trend in nonvolatile memory (NVM). However, a reduced ICELL leaves the operation of the sense amplifier (SAs) vulnerable to bitline (BL) level offset and SA input offset. Thus, small- ICELL NVMs suffer from slow read speed or low read yield. In this study, we propose a new current-sampling-based SA (CSB-SA) to suppress the offset due to device mismatch, while maintaining tolerance for insufficient precharge time. These features enable CSB-SA to achieve a read speed 6.3 ×-8.1× faster than previous SAs, for sensing 100 nA ICELLs on a 2 K-cell bitline. We fabricated a CMOS-logic-compatible, 90 nm, 512 Kb OTP macro, using the CSB-SA. This OTP macro achieves a random access time of 26 ns for reading sub-200 nA ICELL. Measurements confirm that this 90 nm CSB-SA is also capable of sub-100 nA sensing.