By Topic

NP dynamic CMOS resurrection with carbon nanotube field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yanan Sun ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Kursun, V.

Low-power, compact, and high-performance NP dynamic CMOS circuits implemented with a 16nm carbon nanotube transistor technology are presented in this paper. The performances of NP dynamic CMOS full adders based on 16nm carbon nanotube MOSFETs (CN-MOSFETs) and 16nm conventional silicon MOSFETs (Si-MOSFETs) are compared. The dynamic switching power consumption, the leakage power consumption, and the total area are reduced by 53.38%, 95.10%, and 68.96%, respectively, with the CN-MOSFET technology while providing similar propagation delay as compared to the Si-MOSFET NP dynamic CMOS full adder.

Published in:

SoC Design Conference (ISOCC), 2012 International

Date of Conference:

4-7 Nov. 2012