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NP dynamic CMOS resurrection with carbon nanotube field effect transistors

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2 Author(s)
Yanan Sun ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Kursun, V.

Low-power, compact, and high-performance NP dynamic CMOS circuits implemented with a 16nm carbon nanotube transistor technology are presented in this paper. The performances of NP dynamic CMOS full adders based on 16nm carbon nanotube MOSFETs (CN-MOSFETs) and 16nm conventional silicon MOSFETs (Si-MOSFETs) are compared. The dynamic switching power consumption, the leakage power consumption, and the total area are reduced by 53.38%, 95.10%, and 68.96%, respectively, with the CN-MOSFET technology while providing similar propagation delay as compared to the Si-MOSFET NP dynamic CMOS full adder.

Published in:

SoC Design Conference (ISOCC), 2012 International

Date of Conference:

4-7 Nov. 2012

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