Referenced Items are not available for this document.
The integration of III-V optoelectronics with silicon circuitry provides the potential for fabricating dense parallel optical interconnects with data links capable of Terabit aggregate data rates. This paper reviews many of the current approaches used for the fabrication of integrated optoelectronic devices and then highlights the performance results. Finally, the applied method is reviewed in greater detail with recent results on VCSEL, MESFET, and photodiode integration presented
Published in:
Selected Topics in Quantum Electronics, IEEE Journal of
(Volume:3
,
Issue:
3
)
Date of Publication: Jun 1997
- Page(s):
- 952 - 959
- ISSN :
- 1077-260X
- INSPEC Accession Number:
- 5754794
- Digital Object Identifier :
- 10.1109/2944.640649
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1997
- Sponsored by :
- IEEE Photonics Society
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