By Topic

Design and fabrication of VCSELs with AlxOy-GaAs DBRs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
MacDougal, Michael H. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Dapkus, P.Daniel ; Bond, A.E. ; Lin, Chao-Kun
more authors

A procedure for fabricating vertical-cavity surface-emitting lasers (VCSELs) with oxide-based distributed Bragg reflectors (DBRs) is presented. An in-depth analysis of parameters and behavior unique to oxide VCSELs determines the device design. The development cycle time for these devices is reduced through development of a method for post-growth analysis of the epitaxial stack reflectivity before device processing. Threshold currents as low as 160 μA and resistances as low as 80 Ω are demonstrated using different device designs. The total optical loss of low-doped oxide VCSEL structures is 0.163% which is comparable to VCSEL designs based on all-semiconductor DBRs. The thermal resistance of an 8×8 μm VCSEL is measured to be 2.8°C/mW, demonstrating that the presence of oxide layers does not act as a barrier to heat flow out of the active region

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:3 ,  Issue: 3 )