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GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

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2 Author(s)
Guha, S. ; Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY ; Bojarczuk, N.A.

The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 nm in the current injection range of 20-65 A/cm2 at 5-7.5 volts

Published in:

Electronics Letters  (Volume:33 ,  Issue: 23 )

Date of Publication:

6 Nov 1997

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