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Extended cavity ridge waveguide lasers operating at 1.5 μm using a simple damage induced quantum well intermixing process

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5 Author(s)
S. D. McDougall ; Dept. of Electron. & Electr. Eng., Glasgow Univ. ; O. P. Kowalski ; A. C. Bryce ; J. H. Marsh
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The authors report extended cavity ridge waveguide lasers in InGaAs-InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm-1

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Electronics Letters  (Volume:33 ,  Issue: 23 )