By Topic

Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Zhang, Yiyun ; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese, Academy of Sciences, Beijing 100083, China ; Zheng, Haiyang ; Guo, Enqing ; Cheng, Yan
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Light extraction efficiency (LEE) droop as an important factor contributing to the efficiency droop of InGaN-based light-emitting diodes (LEDs) has been demonstrated and investigated in detail. The LEE droop effect is induced by the spatial dependence of the extraction efficiency of photons inside of the LED devices and the aggravating crowding effect of the injection electrons around n-type electrodes as injection current increases. A current blocking layer is introduced to alleviate the LEE droop effect. And the light output power of the LEDs is also improved by 43% at an injection current of 350 mA.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 1 )