By Topic

New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Xu, Min ; Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, USA ; Gu, Jiangjiang J. ; Wang, Chen ; Zhernokletov, D. M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4772944 

We have systematically studied the passivation of InP (100) and (111)A substrate using atomic-layer-deposited Al2O3 as gate dielectric. Modified high- and low-frequency method and full conductance method has been applied to evaluate the interface trap density (Dit) distribution at Al2O3/InP interface through MOS capacitor (MOSCAP) and MOSFET measurements. Lower Dit towards conduction band is obtained from (111)A surface, accompanied by an increase in midgap Dit. This leads to the demonstration of record-high drive current (Ids=600 μAm) for a InP (111)A NMOSFET with gate length (LG) of 1 μm and relatively large subthreshold swing of 230 mV/dec at off-state. Detailed DC IV and current drift measurements confirm the trap distribution from capacitance-voltage characterization. A trap neutral level (E0) model is proposed to explain all observations from MOSCAP and MOSFET characterizations. A universal behavior of the E0 shift on III-V (111)A surface is also analyzed and this observation can play a pivotal role in interface engineering for future III-V CMOS technology with 3D structures.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 1 )