By Topic

Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Eunjin Jung ; School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Korea ; Seongjun Kim ; Hyunsoo Kim

The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (Ar) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the Ar for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 2 )