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Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films

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11 Author(s)
Chang-Kyu Lee ; Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea ; Hong Yoon Jung ; Se Yeob Park ; Byeong Geun Son
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This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2/V·s ) compared with that (14.1 cm2/V·s ) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiOx-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )