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Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD

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6 Author(s)
Kun Li ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA ; Fan Ren ; Chen, R. ; Thai Tran
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Recombination dynamics of InP nanoneedles on silicon is studied using time-resolved photoluminescence. Long recombination lifetime ~13 ns and high IQE ~ 10% are obtained for as-grown nanoneedles. Optically pumped nanoneedle laser is demonstrated at room temperature.

Published in:

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Date of Conference:

27-30 Aug. 2012