We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Vidor, F.F. ; Dept. de Eng. Eletr., UFRGS-Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil ; Wirth, G. ; Assion, F. ; Wolff, K.
more authors

During the past few decades, the interest in flexible and transparent electronics has arisen, and ZnO-based devices present a great potential among these technologies. In this study, ZnO nanoparticles were used to integrate thin-film transistors, whereas cross-linked poly(4-vinylphenol) (PVP) and PECVD-SiO2 were used as a gate dielectric layer. Unfortunately, there are reliability concerns in ZnO devices, such as aging and hysteresis. In this study, an experimental investigation of the hysteresis in the transfer characteristic is performed. It was observed that the hysteresis direction is affected by temperature variation when the polymeric dielectric is used. The PVP bulk polarization, the traps in nanoparticles and at the polymeric dielectric interface, as well as the desorption of oxygen molecules in the surface of the nanoparticles, were attributed as the main cause of the hysteretic behavior.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:12 ,  Issue: 3 )