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N-type P-doped silicon single crystals with resistivity higher than 8000 Ωcm were irradiated with 127I6+ ions of 28 MeV kinetic energy. The penetration of the ions through the target and the processes of energy loss were simulated using the CTRIM Monte Carlo code, and point defect production was calculated in the frame of our diffusion-reaction model. Trapping phenomena were investigated using the method of thermally stimulated currents without applied bias. The modeling of the current-temperature curves takes into consideration both point defects and stress-type trapping centers, produced by the ions stopped into the crystal.