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Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy

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8 Author(s)
Koutsoureli, M. ; Solid State Phys. Sect., Univ. of Athens, Athens, Greece ; Adikimenakis, A. ; Michalas, L. ; Papandreou, E.
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In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.

Published in:

Semiconductor Conference (CAS), 2012 International  (Volume:2 )

Date of Conference:

15-17 Oct. 2012

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